Princeton Instruments OMA V
 
OMA V, The Best NIR Spectroscopy Detectors
To acquire world-class spectral data, you need an ultrasensitive detector that provides the lowest readout noise and the highest dynamic range. That’s why our 16-bit, OMA V InGaAs  (indium gallium arsenide) detection systems are the perfect choice for your spectroscopy application, whether you do NIR absorbance/reflectance, NIR Raman, laser photometry, or NIR fluorescence!

The Best Responsivity
Our newest OMA V detectors utilize linear InGaAs arrays (PDAs) designed to offer excellent near-infrared (NIR) sensitivity from 1.0 µm to 2.2 µm. The detectors tailored to provide high sensitivity from 0.8 µm to 1.7 µm are available. The OMA V can be set up for high- and low-photon-flux applications and can maintain superb dynamic range for a vast range of experimental condition.
 
model  PDA architecture format  pixel pitch (µm)   peak QE
512-1.7 (LN) linear 512 x 1 50 x 500 >80% @ 1.0 to 1.55 µm
1024-1.7 (LN) linear 1024 x 1 25 x 500 >80% @ 1.0 to 1.55 µm
1024-2.2 (LN) linear 1024 x 1 25 x 250 >70% @ 1.4 to 2.0 µm

For more detailed information, please click on a model number to download a corresponding data sheet

 

OMA V Features
OMA V 1.7 µm  - OMA V 2.2 µm  QE PLOT
  • 1024 x 1 and 512 x 1 arrays
  • Thermoelectric or LN cooling with Temperature Tuning feature
  • 16-Bit / 1-MHz digitization, PCI or USB 2.0 interface
  • Software-selectable dual-amplifiers
  • Build-in electronic shutter
  • Up to 1800-Hz spectral rate
  • Fully integrated with the TriVista NIR Raman Spectrograph
  • Supported by WinSpec Software and LabVIEW

 

Temperature Tuning

Temperature & Quantum Efficiency
Relative Response of InGaAs

Since the quantum efficiency of InGaAs shifts with deeper cooling, the temperature of the detector can actually function as a tunable filter, effectively narrowing the device's sensitivity to the wavelength of interest. Cryogenically cooled OMA V models provide thermostating precision of ±0.05ºC across their entire temperature range (i.e., between -50 and -100ºC, or between -70 and -120ºC), allowing you to fine-tune detector sensitivity while also screening out unwanted background.

Why Work in the NIR?
Working in the NIR offers spectroscopists several advantages. One important benefit is that unwanted fluorescence background is generally lower in the near-infrared region of the spectrum, which helps improve signal-to-noise ratio. Another advantage is that NIR detectors are able to "probe deeper" into the sample surface.
About NIR Detectors
UV-VIS spectroscopy is primarily done with scientific-grade CCDs, but because the silicon used in these devices cannot provide photosensitivity beyond 1.1 µm a different material is required for work in the NIR.
InGaAs (indium gallium arsenide) is a III-V compound semiconductor that affords excellent photosensitivity in the NIR. By changing this material's doping concentration, its sensitivity can be altered. Unlike silicon, InGaAs is utilized in a PDA – a linear array of discrete photodiodes on an integrated-circuit chip – rather than in a CCD.

Background Reduction
There are two types of background that need to be suppressed when using an NIR spectroscopy detector. The first is the thermally generated dark charge associated with the operation of the detector; the second is the ambient background. By cooling the detector, dark current can typically be reduced to the point where it is not a limiting factor. Ambient background can be minimized by cooling the detection system's optical path.

Temperature & Ambient Background Radiation
Dark Counts vs. Temperature
100-sec integration, low-noise mode

Other Considerations
Single, double and triple NIR optimized Gold coated Spectrographs, light sources (e.g., YAG lasers and Xe light sources), , optics, software, and accessories (e.g., sample chambers) play significant roles in your experiment. Our application engineers would be happy to discuss all of your NIR spectroscopy requirements!