Princeton Instruments OMA V OMA V, The Best NIR Spectroscopy
Detectors
To acquire world-class
spectral data, you need an ultrasensitive detector that provides
the lowest readout noise and the highest dynamic range. That’s
why our 16-bit, OMA V InGaAs (indium gallium arsenide)
detection systems are the perfect
choice for your spectroscopy application, whether you do NIR absorbance/reflectance,
NIR Raman, laser photometry, or NIR fluorescence!
The Best Responsivity
Our newest OMA V detectors
utilize linear InGaAs arrays (PDAs) designed to offer excellent
near-infrared (NIR) sensitivity from 1.0 µm to 2.2 µm.
The detectors tailored to provide high sensitivity from 0.8 µm
to 1.7 µm are available. The OMA V can be set up for high-
and low-photon-flux applications and can maintain superb dynamic
range for a vast range of experimental condition.
|
model |
PDA architecture |
format |
pixel pitch (µm) |
peak QE |
|
512-1.7 (LN) |
linear |
512 x 1 |
50 x 500 |
>80% @ 1.0 to 1.55 µm |
|
1024-1.7 (LN) |
linear |
1024 x 1 |
25 x 500 |
>80% @ 1.0 to 1.55 µm |
|
1024-2.2 (LN) |
linear |
1024 x 1 |
25 x 250 |
>70% @ 1.4 to 2.0 µm |
|
For more detailed information,
please click on a model number to download a corresponding data
sheet |
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OMA V Features |
OMA V 1.7 µm
- OMA V 2.2 µm QE
PLOT |
- 1024 x 1 and 512 x 1 arrays
- Thermoelectric or LN cooling with Temperature
Tuning feature
- 16-Bit / 1-MHz digitization, PCI or USB 2.0
interface
- Software-selectable dual-amplifiers
- Build-in electronic shutter
- Up to 1800-Hz spectral rate
- Fully integrated with the TriVista
NIR Raman Spectrograph
- Supported by WinSpec
Software and LabVIEW
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Temperature
Tuning |
Temperature & Quantum Efficiency
Relative Response of InGaAs
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Since the quantum efficiency of
InGaAs shifts with deeper cooling, the temperature of the detector
can actually function as a tunable filter, effectively narrowing
the device's sensitivity to the wavelength of interest. Cryogenically
cooled OMA V models provide thermostating precision of ±0.05ºC
across their entire temperature range (i.e., between -50 and
-100ºC, or between -70 and -120ºC), allowing you to
fine-tune detector sensitivity while also screening out unwanted
background.
Why Work in
the NIR?
Working
in the NIR offers spectroscopists several advantages. One important
benefit is that unwanted fluorescence background is generally
lower in the near-infrared region of the spectrum, which helps
improve signal-to-noise ratio. Another advantage is that NIR detectors
are able to "probe deeper" into the sample surface.
About
NIR Detectors
UV-VIS
spectroscopy is primarily done with scientific-grade CCDs, but
because the silicon used in these devices cannot provide photosensitivity
beyond 1.1 µm a different material is required for work
in the NIR. InGaAs (indium gallium arsenide) is a III-V compound semiconductor
that affords excellent photosensitivity in the NIR. By changing
this material's doping concentration, its sensitivity can be altered.
Unlike silicon, InGaAs is utilized in a PDA – a linear array
of discrete photodiodes on an integrated-circuit chip – rather
than in a CCD.
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Background
Reduction
There
are two types of background that need to be suppressed when using
an NIR spectroscopy detector. The first is the thermally generated
dark charge associated with the operation of the detector; the
second is the ambient background. By cooling the detector, dark
current can typically be reduced to the point where it is not
a limiting factor. Ambient background can be minimized by cooling
the detection system's optical path.
Temperature
& Ambient Background Radiation
Dark Counts vs. Temperature
100-sec integration, low-noise mode
 Other Considerations
Single, double and triple NIR optimized
Gold coated Spectrographs, light sources (e.g., YAG lasers and
Xe light sources), , optics, software, and accessories (e.g.,
sample chambers) play significant roles in your experiment. Our
application engineers would be happy to discuss all of your NIR
spectroscopy requirements!
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